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Features
* No External Components Except PIN Diode * Supply-voltage Range: 2.7V to 5.5V * High Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong
Signal Adaption (ATC) Automatic Supply Voltage Adaptation High Immunity against Disturbances from Daylight and Lamps Small Size and Innovative Pad Layout Available for Carrier Frequencies between 33 kHz to 40 kHz and 56 kHz; Adjusted by Zener Diode Fusing 2.5% * TTL and CMOS Compatible
* * * *
Applications
* Home Entertainment Applications * Home Appliances * Remote Control Equipment
Low-voltage IR Receiver ASSP ATA2526
1. Description
The IC ATA2526 is a complete IR receiver for data communication that has been developed and optimized for use in carrier-frequency-modulated transmission applications. The IC combines small size with high sensitivity suppression of noise as caused by daylight and lamps. An innovative and patented pad layout offers unique flexibility for IR receiver module assembly. The ATA2526 is available with standard frequencies (33, 36, 37, 38, 40, 56 kHz) and 3 different noise suppression regulation types (standard, lamp, short burst), thus covering the requirements of different high-volume remote control solutions (please refer to selection guide available for ATA2525/ATA2526). The ATA2526 operates in a supply voltage range of 2.7V to 5.5V. The function of the ATA2526 can be described using the block diagram of Figure 1-1 on page 2. The input stage has two main functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a Controlled Gain Amplifier (CGA) the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used first to convert the input burst signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. This is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental conditions (ambient light, modulated lamps etc.). Other features can be used to adapt the device to the individual application to ensure best transmission quality.
4905E-AUTO-09/09
Figure 1-1.
Block Diagram
VS
IN Input
CGA and filter
OUT Demodulator
Microcontroller
Oscillator Carrier frequency f0
AGC/ATC and digital control
ATA2526
Modulated IR signal min 6 or 10 pulses GND
2
ATA2526
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ATA2526
2. Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Supply voltage Supply current Input voltage Input DC current at VS = 5V Output voltage Output current Operating temperature Storage temperature Power dissipation at Tamb = 25C Symbol VS IS VIN IIN VO IO Tamb Tstg Ptot Value -0.3 to +6 3 -0.3 to VS 0.75 -0.3 to VS 10 -25 to +85 -40 to +125 30 Unit V mA V mA V mA C C mW
3. Thermal Resistance
Parameters Junction ambient TSSOP8 Symbol RthJA Value 110 Unit K/W
4. Electrical Characteristics, 3-V Operation
Tamb = -25C to +85C, VS = 2.7V to 3.3V unless otherwise specified. No. 1 1.1 1.2 2 2.1 2.2 2.3 2.4 3 3.1 3.2 Parameters Supply Supply-voltage range Supply current Output Internal pull-up resistor Output voltage low Output voltage high Output current clamping Input Input DC current VIN = 0 See Figure 6-10 on page 10 5 5 IIN_DCMAX IIN_DCMAX -150 -350 A A C B R2 = 0 See Figure 6-10 on page 10 Tamb = 25C See Figure 6-10 on page 10 R2 = 1.4 k See Figure 6-10 on page 10 1, 3 3, 6 3, 1 3, 6 RPU VOL VOH IOCL VS - 0.25 8 40 250 VS k mV V mA A B B B IIN =0 1 1 VS IS 2.7 0.7 3.0 0.9 3.3 1.3 V mA C B Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
Input DC current VIN = 0; VS = 3V See Figure 6-3 on page 7 Tamb = 25C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage
3
4905E-AUTO-09/09
4. Electrical Characteristics, 3-V Operation (Continued)
Tamb = -25C to +85C, VS = 2.7V to 3.3V unless otherwise specified. No. 3.3 Parameters Test Conditions Pin 3 Symbol IEemin Min. Typ. -800 Max. Unit pA Type* B Minimum detection Test signal: threshold current See Figure 6-9 on page 10 See Figure 6-1 on page 7 VS = 3V Tamb= 25C, IIN_DC=1 A Minimum detection square pp threshold current with AC burst N = 16 current disturbance f = f0; tPER = 10 ms IIN_AC100 = Figure 6-8 on page 9 3 A at 100 Hz BER = 50(1) Test signal: See Figure 6-9 on page 10 VS = 3V, Tamb = 25C IIN_DC = 1 A square pp burst N = 16 f = f0; tPER = 10 ms Figure 6-8 on page 9 BER = 5%(1)
3.4
3
IEemin
-1600
pA
C
3.5
Maximum detection threshold current with VIN > 0V
3
IEemax
-200
A
D
4 4.1 4.2 4.3 4.4 4.5 4.6 4.7
Controlled Amplifier and Filter Maximum value of variable gain (CGA) VS = 3V, Tamb = 25C GVARMAX GVARMIN GMAX f03V_FUSE f03V Tamb = 0 to 70C -3 dB; f0 = 38 kHz; See Figure 6-7 on page 9 f03V B -2.5 -5.5 -4.5 50 -6 72 f0 f0 f0 3.8 +2.5 +3.5 +3.0 dB dB dB % % % kHz D D D A C C C
Minimum value of variable VS = 3V, Tamb = 25C gain (CGA) Total internal amplification(2) Center frequency fusing accuracy of bandpass Overall accuracy center frequency of bandpass Overall accuracy center frequency of bandpass BPF bandwidth VS = 3V, Tamb = 25C VS = 3V, Tamb = 25C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage
4
ATA2526
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ATA2526
5. Electrical Characteristics, 5-V Operation
Tamb = -25C to +85C, VS = 4.5V to 5.5V unless otherwise specified. No. 5 5.1 5.2 6 6.1 Parameters Supply Supply-voltage range Supply current Output Internal pull-up resistor Tamb = 25C See Figure 6-10 on page 10 R2 = 2.4 k See Figure 6-10 on page 10 R2 = 0 See Figure 6-10 on page 10 VIN = 0 See Figure 6-10 on page 10 1, 3 RPU 40 k A IIN =0 1 1 VS IS 4.5 0.9 5.0 1.2 5.5 1.6 V mA C B Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
6.2 6.3 6.4 7 7.1
Output voltage low Output voltage high Output current clamping Input Input DC current
3, 6 3, 1 3, 6
VOL VOH IOCL VS - 0.25 8
250 VS
mV V mA
B B B
5
IIN_DCMAX IIN_DCMAX IEemin
-400
A
C
7.2
Input DC current VIN = 0; VS = 5V See Figure 6-4 on page 8 Tamb = 25C Minimum detection Test signal: threshold current See Figure 6-9 on page See Figure 6-2 on page 7 10 VS = 5V Tamb = 25C Minimum detection IIN_DC = 1 A threshold current with AC square pp current disturbance burst N = 16 IIN_AC100 = 3 A at f = f0; tPER = 10 ms 100 Hz Figure 6-8 on page 9 BER = 50(1) Test signal: See Figure 6-9 on page 10 VS = 5V, Tamb = 25C IIN_DC = 1 A square pp burst N = 16 f = f0; tPER = 10 ms Figure 6-8 on page 9 BER = 5%(1)
5
-700
A
B
7.3
3
-1000
pA
B
7.4
3
IEemin
-2500
pA
C
7.5
Maximum detection threshold current with VIN > 0V
3
IEemax
-500
A
D
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage
5
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5. Electrical Characteristics, 5-V Operation (Continued)
Tamb = -25C to +85C, VS = 4.5V to 5.5V unless otherwise specified. No. 8 8.1 8.2 8.3 Parameters Maximum value of variable gain (CGA) Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Controlled Amplifier and Filter VS = 5V, Tamb = 25C GVARMAX GVARMIN GMAX f05V 50 -6 72 f03V-FUSE + 0.5 dB dB dB D D D
Minimum value of variable VS = 5V, Tamb = 25C gain (CGA) Total internal amplification(2) Resulting center frequency fusing accuracy VS = 5V, Tamb = 25C f0 fused at VS = 3V VS = 5V, Tamb = 25C
8.4
%
C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage
5.1
Reliability
Electrical qualification (1000h at 150C) in molded SO8 plastic package
6
ATA2526
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ATA2526
6. Typical Electrical Curves at Tamb = 25C
Figure 6-1. IEemin versus IIN_DC, VS = 3V
100 VS = 3V f = f0
IEemin (nA)
10
1
0 0 1 10 100 1000
IIN_DC (A)
Figure 6-2.
IEemin versus IIN_DC, VS = 5V
100 VS = 5V f = f0
IEemin (nA)
10
1
0 0 1 10 100 1000
IIN_DC (A)
Figure 6-3.
VIN versus IIN_DC, VS = 3V
3.5 3.0 2.5 VS = 3V f = f0
VIN (V)
2.0 1.5 1.0 0.5 0 0 0.1 1 10 100 1000
IIN_DC (A)
7
4905E-AUTO-09/09
Figure 6-4.
VIN versus IIN_DC, VS = 5V
3.5 3.0 2.5 VS = 5V f = f0
VIN (V)
2.0 1.5 1.0 0.5 0 0 0.1 1 10 100 1000
IIN_DC (A)
Figure 6-5.
Data Transmission Rate, VS = 3V
4000 3500 3000 2500
Short burst type
3060
Bits/s
2077 1357
Standard type
2000
2000 1500 1000 905 500 0 30
1333
Lamp type
35
40
45
50
55
60
f0 (kHz)
Figure 6-6.
Data Transmission Rate, VS = 5V
4000 3500 3000 2500 2317 2179
Standard type Short burst type
3415
Bits/s
2000 1479 1500 1000 952 500 0 30
1404
Lamp type
35
40
45
50
55
60
f0 (kHz)
8
ATA2526
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ATA2526
Figure 6-7. Typical Bandpass Curve
1.1 VS = 3V 1.0
Relative Amplitude
0.9 0.8 Bandwidth (-3 dB) 0.7 0.6 0.5 0.4 0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f/f0
Q = f/f0/B; B -3 dB values Example: Q = 1/(1.047 - 0.954) = 11
Figure 6-8.
Illustration of Used Terms, Example: f = 33 kHz, burst with 16 pulses, 16 periods
t PER = 970 s t B = 485 s Burst (N = 16 pulses) t GAP > t DON + t DOFF 1 7 16 7 7 Period (P = 16)
IN
33 s (f0 = 33 kHz)
OUT
t DON
tDOFF Envelope 1 15520 s
485 s Envelope 16
OUT
Telegram pause Data word 16 ms TREF = 62 ms Data word
t
9
4905E-AUTO-09/09
Figure 6-9.
Test Circuit
I Ee = U1/400 k U1 1 nF 400 k VDD = 3V to 5V IIN_DC R1 = 220
VS IEe VPULSE IIN 20 k 1 nF U2 IN ATA2526 GND OUT
IIN_AC100
20 k f0 16
I IN_DC = U2/40 k
C1 4.7 F
+
DC
+
tPER = 10 ms
Figure 6-10. Application Circuit
VDD = 3V to 5V
R1 = 220 IS VS IOCL IN IIN GND ATA2526 OUT RPU
R2(1) > 2.4 k
Microcontroller
+
IIN_DC IEe
C1 4.7 F
VIN
VO C2(2) = 470 pF (10 nF)
(1) (2)
Optional The value of C2 is dimensioned for the short burst type ATA2526P7xx. For the other types C2 can be omitted. In case of an optional resistor R2 > 2.4 k the value of C 2 must be increased to C2 = 10 nF. For the other types C2 = 470 pF is sufficient.
10
ATA2526
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ATA2526
7. Chip Dimensions
Figure 7-1. Chip Size in m
1080,960 GND 393,839 IN 666,828
scribe
length
OUT 225,496
ATA2526
48,73 VS Zapping
0,0
Versioning
width
Note: Pad coordinates are given for lower left corner of the pad in m from the origin 0,0
Dimensions
Length inclusive scribe Width inclusive scribe Thickness Pads Fusing pads
1.04 mm 1.20 mm 290 5% 80 x 80 60 x 60 AlCu/AlSiTi(1) 0.8 m Si3N4/SiO2 0.7/0.3 m
Pad metallurgy
Material Thickness
Finish
Material Thickness
Note:
1. Value depends on manufacture location.
11
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8. Ordering Information
Delivery: unsawn wafers (DDW) in box Extended Type Number ATA2526S1xx(1)C-DDW ATA2526S3xx(1)C-DDW ATA2526S7xx(1)C-DDW Notes: D(2) 2175 1400 3415 Type Standard type: 10 pulses, high data rate Lamp type: 10 pulses, enhanced suppression of disturbances, secure data transmission Short burst type: 6 pulses, highest data rate
1. xx means carrier frequency value (33, 36, 37, 38 or 40 kHz and 56 kHz) 2. Maximum data transmission rate up to bits/s with f0 = 56 kHz, VS = 5V (see Figure 6-6 on page 8)
8.1
Pad Layout
Figure 8-1. Pad Layout
GND
IN
OUT
ATA2526 Pad layout
VS
Zapping
Versioning
Table 8-1.
SYMBOL OUT VS GND IN Zapping Versioning
Pin Description
FUNCTION Data output Supply voltage GND Input pin diode f0 adjust Type adjust
12
ATA2526
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ATA2526
9. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. 4905E-AUTO-09/09 History * Put datasheet in newest template * Section 8 "Ordering Information" on page 12 changed * * * * * 4905D-AUTO-10/06 * * * * * 4905C-AUTO-04/06 4905B-AUTO-04/06 Features on page 1 changed Applications on page 1 changed Section 1 "Description" on page 1 changed Section 2 "Pin Configuration" on page 2 changed Number 2.2, 3.3 and 3.4 of Section 5 "Electrical Characteristics, 3-V Operation" on pages 3 to 4 changed Number 73, 7.4 and 8.4 of Section 5 "Electrical Characteristics, 3-V Operation" on page 5 to 6 changed Section 6.1 "ESD" on page 6 deleted Figure 7-10 "Application Circuit" on page 10 changed Section 9 "Ordering Information" on page 12 changed Rename Figure 9-1 on page 12
* Section 9 "Ordering Information" on page 12 changed * Put datasheet in a new template * Section 8 "Chip Dimensions" on page 11 changed
13
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4905E-AUTO-09/09

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